On The Role Of The Interface Charge In Non-Ideal Metal-Semiconductor Contacts

摘要

The bias dependent interface charge is considered as the origin of theobserved non-ideality in current-voltage and capacitance-voltagecharacteristics. Using the simplified model for the interface electronicstructure based on defects interacting with the continuum of interface states,the microscopic origin of empirical parameters describing the bias dependentinterface charge function is investigated. The results show that in non-idealmetal-semiconductor contacts the interface charge function depends on theinterface disorder parameter, density of defects, barrier pinning parameter andthe effective gap center. The theoretical predictions are tested againstseveral sets of published experimental data on bias dependent ideality factorand excess capacitance in various metal-semicoductor systems.